DatasheetsPDF.com

TIM7785-35SL

Toshiba
Part Number TIM7785-35SL
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Jun 20, 2020
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 6.0dB at 7.7G...
Datasheet PDF File TIM7785-35SL PDF File

TIM7785-35SL
TIM7785-35SL

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.
5dBm at 7.
7GHz to 8.
5GHz ･HIGH GAIN G1dB= 6.
0dB at 7.
7GHz to 8.
5GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.
0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-35SL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 8.
0A f = 7.
7 to 8.
5GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 35.
0dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 28  MIN.
45.
0 5.
0    -42   TYP.
MAX.
45.
5  6.
0  8.
0 9.
0  ±0.
8 33  -45  8.
0 9.
0  100 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)