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Part Number
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TIM8596-4 |
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Manufacturer
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Toshiba |
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Description
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MICROWAVE POWER GaAs FET |
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Published
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Jun 20, 2020 |
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Detailed Description
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FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 8.5GHz to 9.6GHz ･HIGH GAIN
G1dB= 7.5dB at 8.5G...
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Datasheet
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TIM8596-4
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Overview
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.
5dBm at 8.
5GHz to 9.
6GHz ･HIGH GAIN
G1dB= 7.
5dB at 8.
5GHz to 9.
6GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM8596-4
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
SYMBOL
CONDITIONS
P1dB G1dB IDS
VDS= 9V IDSset= 2.
0A f= 8.
5 to 9.
6GHz
UNIT dBm dB
A
Power Added Efficiency
add
%
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 100
MIN.
35.
5 6.
5
TYP.
MAX.
36.
5
7.
5
1.
7
2.
2
24
70
ELECTRICAL CHARACTERISTICS ( Ta= ...
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