2N5686

2N5680 : The 2N5679 and 2N5680 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit The complementary NPN types are the 2N5681 and 2N5682 respectively TO-39 Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO VCEO VEBO IC IB Ptot Tstg Tj Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tcase £ 25°C Tamb £ 25°C Operating and Storage Temperature Range Junction temperature 2N5679 -100V -100V -4V -1A -0.5A 10W .

2N5680 : The CENTRAL SEMICONDUCTOR 2N5679, 2N5681 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier and switching applications where high voltages are required. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Continuous Base Current IB Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 2N5679 2N5681 100 2N5680 2N5682 120 100 120 4.0 1.

2N5680 : 2N5679 2N5680 PNP SILICON 2N5681 2N5682 NPN SILICON CASE 79-02, STYLE 1 TO-5 (TO-205AA) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO vCBO v EBO IB •c PD Pd TJ- Tstg 2N5679 2N5680 2N5681 2N5682 100 120 100 120 4.0 0.5 1.0 1.0 5.7 10 57 -65 to +200 Unit Vdc Vdc Vdc Vdc Adc Watt mW/X Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Amb.

2N5680 : SYMBOL 2N5679 2N5680 2N5681 2N5682 Collector -Emitter Voltage VCEO 100 120 Collector -Base Voltage VCBO 100 120 Emitter -Base Voltage VEBO 4.0 Collector Current Continuous IC 1.0 Base Current IB 0.5 Power Dissipation @Ta=25 degC PD 1.0 Derate Above 25deg C 5.7 Power Dissipation @Tc=25 degC PD 10 Derate Above 25deg C 57 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 17.5 Junction to Ambient Rth(j-a) 175 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N5679 2N5680 2N5681 2N5682 Collector -Emitter Voltage VCEO(sus) IC=10mA,IB=.

2N5680 : 2N5679 & 2N5680 PNP Power Silicon Transistor Features  JAN, JANTX, JANTXV, JANS, and JANSR 100K rads (si) per MIL-PRF-19500/560  TO-39 (TO-205AD) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current Test Conditions Symbol Units IC = 100 mAdc, 2N5679 IC = 100 mAdc, 2N5680 VCE = 40 Vdc, 2N5679 VCE = 60 Vdc, 2N5680 VCE = 60 Vdc, VBE = 1.5 Vdc, 2N5679 VCE = 80 Vdc, VBE = 1.5 Vdc, 2N5679 VCB = 60 Vdc, 2N5679 VCB = 60 Vdc, 2N5680 V(BR)CEO Vdc ICEO µAdc ICEX nAdc ICBO nAdc Emitter - Base Cutoff Current VEB = 7.0 Vdc IEBO nAdc On .

2N5680 : TECHNICAL DATA PNP POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/582 Devices 2N5679 2N5680 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS (TA = 250C unless otherwise noted) Ratings Symbol 2N5679 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation VCEO VCBO VEBO IC IB PT Top, Tstg Symbol RθJC 2N5680 Unit Vdc Vdc Vdc Adc Adc W W °C Unit 0 C www.DataSheet4U.com @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range 100 120 100 120 4.0 4.0 1.0 1.0 0.5 0.5 1.0 1.0 10 10 -65 to +200 -65 to +200 Max. 17.5 TO-39* (TO-205AD) THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Jun.

2N5680 : SYMBOL 2N5679 2N5681 100 100 2N5680 2N5682 120 120 UNITS V V V A A W mW/deg C W mW/deg C deg C VCEO Collector -Emitter Voltage VCBO Collector -Base Voltage VEBO 4.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation @Ta=25 degC 5.7 Derate Above 25deg C PD 10 Power Dissipation @Tc=25 degC 57 Derate Above 25deg C Tj, Tstg -65 to +200 Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-c) 17.5 Junction to Case Rth(j-a) 175 Junction to Ambient ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N5679 2N5681 VCEO(sus) IC=10mA,IB=0 100 Collector -Emitter Voltage ICBO VCB=1.

2N5680 : 2N5679 – 2N5680 PNP SWITCHING TRANSISTORS The 2N5679 and 2N5680 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case. They are intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit. The complementary NPN types are the 2N5681 and 2N5682 . Compliance to RoHS. C B E ABSOLUTE MAXIMUM RATINGS Value 25679 IB =0 IE =0 IC =0 www.DataSheet.net/ Symbol VCEO VCBO VEBO IC IB PD TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature range 2N5680 -120 -120 Unit V V V A mA W °C -100 -100 -4 -1 -500 1 10.

2N5681 : The 2N5681, 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching applications. The complementary PNP types are the 2N5679 and 2N5680 respectively. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC IB P tot P tot T stg Tj Parameter 2N5680 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c ≤ 25 o C Total Dissipation at T amb ≤ 50 o C Storage Temperature Max. Operating Junction Temperature 100 100 4 1 0.5 10 1 -65 to 2.

2N5681 : The 2N5681 and 2N5682 are silicon expitaxial planar NPN transistors in jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuits The complementary PNP types are the 2N5679 and 2N5680 respectively TO-39 Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO VCEO VEBO IC IB Ptot Tstg Tj Collector – Base Voltage(IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tcase £ 25°C Tamb £ 25°C Operating and Storage Temperature Range Junction temperature 2N5681 100V 100V 4V 1A 0.5A .

2N5681 : A Silicon epitaxial NPN planer transistor in a TO-39 type package designed for use as drivers for high Power transistors in general purpose amplifier and switching circuits. Collector 3 2 Base 1 Emitter Maximum Ratings: Characteristic Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Base Current Total Device Dissipation Total Device Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol VCEO (IE = 0), VCBO (IC = 0), VEBO IC IB (TC = +25°C), Ptot (TA = +25°C), Ptot TJ Tstg RthJC RthJA Rating 100 4 1 500 10 1 -65 to +200 -65 to +200 17.4 175 Unit V A mA.

2N5681 : The CENTRAL SEMICONDUCTOR 2N5679, 2N5681 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier and switching applications where high voltages are required. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Continuous Base Current IB Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 2N5679 2N5681 100 2N5680 2N5682 120 100 120 4.0 1.

2N5681 : 2N5679 2N5680 PNP SILICON 2N5681 2N5682 NPN SILICON CASE 79-02, STYLE 1 TO-5 (TO-205AA) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO vCBO v EBO IB •c PD Pd TJ- Tstg 2N5679 2N5680 2N5681 2N5682 100 120 100 120 4.0 0.5 1.0 1.0 5.7 10 57 -65 to +200 Unit Vdc Vdc Vdc Vdc Adc Watt mW/X Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Amb.

2N5681 : SYMBOL 2N5679 2N5680 2N5681 2N5682 Collector -Emitter Voltage VCEO 100 120 Collector -Base Voltage VCBO 100 120 Emitter -Base Voltage VEBO 4.0 Collector Current Continuous IC 1.0 Base Current IB 0.5 Power Dissipation @Ta=25 degC PD 1.0 Derate Above 25deg C 5.7 Power Dissipation @Tc=25 degC PD 10 Derate Above 25deg C 57 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 17.5 Junction to Ambient Rth(j-a) 175 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N5679 2N5680 2N5681 2N5682 Collector -Emitter Voltage VCEO(sus) IC=10mA,IB=.

2N5681 : TECHNICAL DATA NPN POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/583 Devices 2N5681 2N5682 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS (TA = 25° C unless otherwise noted) 2N5681 Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range VCEO VCBO VEBO IC IB PT Top, Tstg Symbol RθJC 100 100 4.0 1.0 0.5 1.0 10 -65 to +200 2N5682 120 120 4.0 1.0 0.5 1.0 10 -65 to +200 Units Vdc Vdc Vdc Adc Adc W W °C Unit 0 C www.DataSheet4U.com THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linea.

2N5681 : SYMBOL 2N5679 2N5681 100 100 2N5680 2N5682 120 120 UNITS V V V A A W mW/deg C W mW/deg C deg C VCEO Collector -Emitter Voltage VCBO Collector -Base Voltage VEBO 4.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation @Ta=25 degC 5.7 Derate Above 25deg C PD 10 Power Dissipation @Tc=25 degC 57 Derate Above 25deg C Tj, Tstg -65 to +200 Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-c) 17.5 Junction to Case Rth(j-a) 175 Junction to Ambient ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N5679 2N5681 VCEO(sus) IC=10mA,IB=0 100 Collector -Emitter Voltage ICBO VCB=1.

2N5681 : 2N5681 – 2N5682 NPN SWITCHING TRANSISTORS The 2N5681 and 2N5682 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case. They are intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit. The complementary PNP types are the 2N5679 and 2N5680 . Compliance to RoHS. C B E ABSOLUTE MAXIMUM RATINGS Value 25681 IB =0 IE =0 IC =0 www.DataSheet.net/ Symbol VCEO VCBO VEBO IC IB PD TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature range 2N5682 120 120 Unit V V V A mA W °C 100 100 4 1 500 1 10 200 -6.