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MMZ09332BT1

Part Number MMZ09332BT1
Manufacturer NXP
Description Heterojunction Bipolar Transistor
Published Jul 13, 2020
Detailed Description Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Lineari...
Datasheet MMZ09332BT1





Overview
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ09332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.  Typical PA Pe...





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