DatasheetsPDF.com

MMZ09332BT1

Part Number	MMZ09332BT1
Manufacturer	NXP
Description	Heterojunction Bipolar Transistor
Published	Jul 13, 2020
Detailed Description	Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Lineari...
Datasheet	MMZ09332BT1 PDF File

Overview

Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ09332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W--CDMA, TD--SCDMA and LTE wireless broadband applications.
It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz.
It operates from a supply voltage of 3 to 5 volts.
The amplifier requires minimal external matching and offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.
 Typical PA Pe...

Similar Datasheet

MMZ09332BT1 Heterojunction Bipolar Transistor - NXP

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)