Freescale Semiconductor Technical Data
RF Power LDMOS
Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz.
The high gain, ruggedness and wideband performance of this device makes it ideal for large--signal, common--source amplifier applications in handheld radio equipment.
Narrowband Performance (7.
5 Vdc, IDQ = 100 mA, TA = 25C, CW)
Frequency (MHz)
Gps
D
Pout
(dB)
(%)
(W)
870 (1)
15.
2
71.
0
7.
3
Wideband Performance (7.
5 Vdc, TA = 25C, CW)
Frequency (MHz)
Pin
Gps
D
Pout
(W)
(dB)
(%)
(W)
136–174 350–470 (2,5) 450–520 (3,5) 760–860 (4,5)
0.
25
14.
6
69.
0
7.
2
0...