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AFT09MS007NT1

Part Number	AFT09MS007NT1
Manufacturer	NXP
Description	RF Power LDMOS Transistor
Published	Jul 13, 2020
Detailed Description	Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral M...
Datasheet	AFT09MS007NT1 PDF File

Overview

Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz.
The high gain, ruggedness and wideband performance of this device makes it ideal for large--signal, common--source amplifier applications in handheld radio equipment.
Narrowband Performance (7.
5 Vdc, IDQ = 100 mA, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB) (%) (W) 870 (1) 15.
2 71.
0 7.
3 Wideband Performance (7.
5 Vdc, TA = 25C, CW) Frequency (MHz) Pin Gps D Pout (W) (dB) (%) (W) 136–174 350–470 (2,5) 450–520 (3,5) 760–860 (4,5) 0.
25 14.
6 69.
0 7.
2 0.
20 15.
6 60.
9 7.
3 0.
22 15.
4 56.
0 7.
5 0.
23 15.
1 48.
1 7.
5 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin Test (W) Voltage Result 870 (1) CW > 65:1 at all 0.
4 Phase Angles (3 dB Overdrive) 10.
8 No Device Degradation 1.
Measured in 870 MHz narrowband test circuit...

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AFT09MS007NT1 RF Power LDMOS Transistor - NXP

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