BFU768F
NPN wideband silicon germanium RF
transistor
Rev.
1.
2 — 24 December 2012
Product data sheet
1.
Product profile
CAUTION
1.
1 General description
NPN silicon germanium microwave
transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.
20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.
2 Features and benefits
Low noise high linearity RF
transistor 110 GHz fT silicon germanium technology Optimal linearity for low current and high gain Low minimum noise f...