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BFU768F

NXP
Part Number BFU768F
Manufacturer NXP
Description NPN wideband silicon germanium RF transistor
Published Jul 14, 2020
Detailed Description BFU768F NPN wideband silicon germanium RF transistor Rev. 1.2 — 24 December 2012 Product data sheet 1. Product profi...
Datasheet PDF File BFU768F PDF File

BFU768F
BFU768F

Overview
BFU768F NPN wideband silicon germanium RF transistor Rev.
1.
2 — 24 December 2012 Product data sheet 1.
Product profile CAUTION 1.
1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.
20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.
2 Features and benefits  Low noise high linearity RF transistor  110 GHz fT silicon germanium technology  Optimal linearity for low current and high gain  Low minimum noise f...


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