Part Number
|
TK33S10N1Z |
Manufacturer
|
Toshiba |
Title
|
N-channel MOSFET |
Description
|
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK33S10N1Z
1. Applications
• Automotive • Switching Voltage...
|
Features
|
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current:...
|
Published
|
Aug 20, 2020 |
Datasheet
|
TK33S10N1Z PDF File
|
Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Cir...
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