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TK33S10N1Z

Toshiba
Part Number TK33S10N1Z
Manufacturer Toshiba
Description N-channel MOSFET
Published Aug 20, 2020
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TK33S10N1Z 1. Applications • Automotive • Switching Voltage Regulators • Motor ...
Datasheet PDF File TK33S10N1Z PDF File

TK33S10N1Z
TK33S10N1Z

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TK33S10N1Z 1.
Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2.
Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.
2 mΩ (typ.
) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
5 mA) 3.
Packaging and Internal Circuit TK33S10N1Z 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Si...


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