Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STB11NM60FD
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=125℃
Drain Current-Single Pulsed
±30
11 7
44
PD
Total Dissipation @TC=25℃
160
Tch
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-65~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
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