AOTF409 P-Channel Enhancement Mode Field Effect
Transistor
General Description
Features
The AOTF409/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.
With the excellent thermal resistance of the TO220FL package, this device is well suited for high current load applications.
AOTF409 and AOTF409L are electrically identical.
VDS (V) =-60V ID = -24A RDS(ON) 40mΩ RDS(ON) 54mΩ
(VGS = -10V) (VGS = -10V) (VGS = -4.
5V)
- RoHS Compliant - AOTF409L Halogen Free
100% UIS Tested!
TO-220FL
D
G DS
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
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