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AOTF4185

INCHANGE
Part Number AOTF4185
Manufacturer INCHANGE
Description P-Channel MOSFET
Published Jan 19, 2021
Detailed Description isc P-Channel MOSFET Transistor AOTF4185 FEATURES ·Drain Current –ID= -34A@ TC=25℃ ·Drain Source Voltage- : VDSS= -40V...
Datasheet PDF File AOTF4185 PDF File

AOTF4185
AOTF4185

Overview
isc P-Channel MOSFET Transistor AOTF4185 FEATURES ·Drain Current –ID= -34A@ TC=25℃ ·Drain Source Voltage- : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =16mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -34 A IDM Drain Current-Single Pluse -100 A PD Total Dissipation @TC=25℃ 33 W TJ Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 4.
5 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor AOTF4185 ELECTRICAL CHARACTERISTICS TC=25℃ unles...


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