isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
FCD2250N80Z
·FEATURES ·With TO-252(DPAK) packaging ·UIS capability ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS ·Switching applications ·AD-AC power supply ·LED lighting
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
2.
6 1.
7
6.
5
PD
Total Dissipation
39
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERI...