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FCD2250N80Z

INCHANGE
Part Number FCD2250N80Z
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 3, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCD2250N80Z ·FEATURES ·With TO-252(DPAK) packaging ·UIS capabil...
Datasheet PDF File FCD2250N80Z PDF File

FCD2250N80Z
FCD2250N80Z

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCD2250N80Z ·FEATURES ·With TO-252(DPAK) packaging ·UIS capability ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·AD-AC power supply ·LED lighting ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 2.
6 1.
7 6.
5 PD Total Dissipation 39 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.
2 100 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCD2250N80Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 800 V VGS(th) Gate Threshold Voltage VDS=±20V; ID=0.
26mA 2.
5 4.
5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=1.
3A 1.
87 2.
25 Ω IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±20V;VDS= 0V VDS= 800V; VGS= 0V;Tj=25℃ VDS= 640V; VGS= 0V;Tj=175℃ ISD=2.
6A, VGS = 0 V ±10 μA 25 250 μA 1.
2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, o...


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