| Part Number | MDP10N055 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalan... |
| Features |
·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications INCHANGE Semiconducto... |
| File Size | 202.52KB |
| Datasheet |
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MDP10N055 : Features The MDP10N055 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications. VDS = 100V ID = 120A @VGS = 10V Very low on-resistance RDS(ON) 5.5 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested 175 oC operating temperature D G D S TO-220 Absolute Maximum Ratings (TJ = 25 oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2) Power Dissipation Single Pulse Ava.
MDP10N055TH : Features The MDP10N055TH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications. VDS = 100V ID = 120A @VGS = 10V Very low on-resistance RDS(ON) 5.5 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested 175 oC operating temperature D GDS TO-220 Absolute Maximum Ratings (TJ = 25 oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2) TC=25oC (Silicon Limited) TC=25oC.