Isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-247 packaging ·UIS rating curve ·Peak current vs pulse width curve ·High power and current handling capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High current switching applications
INCHANGE Semiconductor
RFG70N06
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous@TC=25℃
70
IDM
Drain Current-Single Pulsed
450
PD
Total Dissipation
150
Tch
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL C...