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RFG70N06

INCHANGE
Part Number RFG70N06
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 4, 2020
Detailed Description Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·UIS rating curve ·Peak current vs pulse width curve ·H...
Datasheet PDF File RFG70N06 PDF File

RFG70N06
RFG70N06

Overview
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·UIS rating curve ·Peak current vs pulse width curve ·High power and current handling capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High current switching applications INCHANGE Semiconductor RFG70N06 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous@TC=25℃ 70 IDM Drain Current-Single Pulsed 450 PD Total Dissipation 150 Tch Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.
0 80 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor RFG70N06 ELECTRICA...


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