isc Silicon
NPN Darlingtion Power
Transistor
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
hFE = 750 (Min) @ IC =10 Adc ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)=80V(Min) ·Complement to type 2N6286 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Intended for general purpose amplifier and low frequency
switching applications, such as linear and switching industrial equipment.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5.
0
V
IC
Collector Current -Continuous
20
A
ICP
Collector C...