isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2N6488
DESCRIPTION ·DC Current Gain Specified to 15 Amperes-
: hFE =20-150@ IC= 5.
0A =5.
0(Min)@ IC=15A
·Collector-Emitter Sustaining Voltage: VCEO(SUS)=80Vdc(Min)
·Complement to Type 2N6491
APPLICATIONS ·Designed for use in general-purpose amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
90
VCEO
Collector-Emitter Voltage
80
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
15
IB
Base Current
5
Collector Power Dissipation @ TC=25℃
75
PC
Collector Power Dissipation
@ Ta=25℃
1.
8
TJ
Junction Temperature
150
Tstg
Storage Tempera...