isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
2SA968B
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2238B ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.
5
A
IE
Emitter Current- Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.
5
A
25
W
150
℃
T...