INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
2SA1012-D
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -0.
4(V)(Max)@IC= -3A ·High Switching Speed ·“-D”= TO-252 Package ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBO L
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-50
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-5
A
20
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
ELECTRICAL CHARAC...