2SC1623

2SC1621 : .

2SC1621 : SMD Type NPN Silicon Epitaxial Transistor 2SC1621 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features High speed : tstg=20ns MAX. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 40 20 5 200 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gai.

2SC1622 : .

2SC1622A : .

2SC1622A : SMD Type NPN Silicon Epitaxial Transistor 2SC1622A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 High DC current gain. +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 120 120 5 50 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter satu.

2SC1623 : DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V ABSOLUTE MAXIMUM RATINGS PACKAGE DIMENSIONS in millimeters 2.8 ± 0.2 0.4 +0.1 –0.05 1.5 0.65 +0.1 –0.15 0.95 Maximum Voltages and Current (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Maximum Power Dissipation Total Power Dissipation at 25 ˚C Ambient Temperature PT Maximum Temperatures Junction Temperature Storage Temperature Range Tj Tstg 150 ˚C –55 to +150 ˚C 200 mW 1.1 to 1.4 VCBO VCEO VEBO I.

2SC1623 : Production specification Silicon Epitaxial Planar Transistor FEATURES  High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA).  High Voltage:VCEO=50V.  MSL 1. APPLICATIONS Pb Lead-free  NPN Silicon Epitaxial Planar Transistor.  Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. Marking 2SC1623 L4/L5/L6/L7 2SC1623 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 60 50 5 100 200 -55 to +150 Units V V V mA mW ℃ C018 Re.

2SC1623 : The UTC 2SC1623 is a NPN silicon transistor using UTC’s advanced technology to provide customers with high DC current gain and high breakdown voltage. The UTC 2SC1623 is usually used in audio frequency general purpose amplifier. 3 2 1 SOT-23 (JEDEC TO-236) 3 2 1 SOT-323  FEATURES * High breakdown Voltage * High DC Current Gain  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC1623L-xx-AE3-R 2SC1623G-xx-AE3-R 2SC1623L-xx-AL3-R 2SC1623G-xx-AL3-R Note: Pin Assignment: B: Base E: Emitter C: Collector Package SOT-23 SOT-323 Pin Assignment 1 2 3 B E C B E C Packing Tape Reel Tape Reel 2SC1623G-xx-AE3-R (1) Packing Type (2) Package Type (3) Rank (4) Green Pa.

2SC1623 : 2SC1623 Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 625℃/W Junction to Ambient Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Symbol VCBO VCEO VEBO IC PD Rating 60 50 5 100 200 Unit V V V mA mW NPN Silicon Epitaxial Transistors SOT-23 A D 3 1 2 CB Note: 1. .

2SC1623 : www.DataSheet4U.com 2SC1623 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 50 60 5.0 100 200 +150 -55 to +150 Unit V V V mA mW °C °C WEITRON http://www.weitron.com.tw 1/3 02-Aug-06 2SC1623 ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage IC = 1mA, I B = 0 Collector-Base Breakdown Voltage IC = 100µA, I E = 0 Emitter-Base Breakdown Voltage IE= 100µA, IC=0 Collector Cutoff Current VCB = 60V, I E .

2SC1623 : Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 FEATURES Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 PCM: 200 mW (Tamb=25℃) 0. 025 0. 95¡ À 2. 80¡ À 0. 05 1. 60¡ À0. 05 Collector current mA ICM: 100 Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symb.

2SC1623 : SMD Type NPN Silicon Transistor 2SC1623 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA High Voltage: VCE O = 50 V +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 5 100 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector.

2SC1623 : Designed for audio frequency amplifier applications. SOT-23 Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .020(0.50) .012(0.30) .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 60 50 5 100 200 +150 -55 to +150 Unit V V V mA mW o o .091(2.30) .067(1.70) .118(3.00) .110(2.80) .045(1.15) .034(0.85) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .0043(0.11) .0035(0.09) C .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimete.

2SC1623 : The 2SC1623 is designed for use driver stage of AF amplifier and general purpose application. PACKAGE DIMENSIONS A L S 3 Top View SC-59 Dim A Min 2.70 1.30 1.00 0.35 0.00 0.10 0.20 1.25 2.25 Max 3.10 1.70 1.30 0.50 0.10 0.26 0.60 1.65 3.00 2 1 B B C D D G C H COLLECTOR BASE EMITTER G H J K 1.90 REF. J K L S All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC Pd TJ, TSTG Ratings 60 50 5 150 250 +150, -55 ~ +150 Unit V V V mA mW ℃ CHARACTERISTICS at Ta = 25°C Symbol BVCBO BVCEO BVEBO ICBO.

2SC1623 : 3 2 1 SOT-23 The UTC 2SC1623 is a NPN silicon transistor using UTC’s advanced technology to provide customers with high DC current gain and high breakdown voltage. The UTC 2SC1623 is usually used in audio frequency general purpose amplifier. „ FEATURES * High breakdown Voltage * High DC Current Gain „ ORDERING INFORMATION Ordering Number Halogen Free 2SC1623G-x-AE3-R B: Base C: Collector Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel Lead Free 2SC1623L-x-AE3-R Note: Pin Assignment: E: Emitter 2SC1623L-x-AE3-R (1) Packing Type (2) Package Type (3) (4) Lead Free (1) R: Tape Reel (2) AE3: SOT-23 (3) x: refer to Classification of hFE (4) G: Halogen Free, L: Lead Free ww.

2SC1623 : of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronic.