isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter sustaining Voltage
: VCEO=150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio Frequency Amplifier Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
50
mA
IB
Base Current- Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
mA
800
mW
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2705
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