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2SC2705

Toshiba Semiconductor
Part Number 2SC2705
Manufacturer Toshiba Semiconductor
Description TRANSISTOR
Published Mar 22, 2005
Detailed Description 2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705 Audio Frequency Amplifier Applications Unit...
Datasheet PDF File 2SC2705 PDF File

2SC2705
2SC2705

Overview
2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705 Audio Frequency Amplifier Applications Unit: mm • • • Small collector output capacitance: Cob = 1.
8 pF (typ.
) High transition frequency: fT = 200 MHz (typ.
) Complementary to 2SA1145.
Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 150 150 5 50 5 800 150 −55 to 150 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (Note) VCE (sat) VBE (sat) fT Cob Test Condition VCB = 150 V, IE = 0 VEB = 5 V, IC = 0 IC = 1 mA, IB = 0 VCE = 5 V, IC = 10 mA IC = 10 mA, IB = 1 mA VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Weight: 0.
36 g (typ.
) Min ― ― 150 80 ― ― ― ― Typ.
― ― ― ― ― ― 200 1.
8 Max 0.
1 0.
1 ― 240 1.
0 0.
8 ― ― V V MHz pF Unit µA µA V Note: hFE classification O: 80 to 160, Y: 120 to 240 Marking C2705 Part No.
(or abbreviation code) Lot No.
Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1 2004-07-07 Free Datasheet http://www.
Datasheet4U.
com 2SC2705 IC – VCE 56 0.
5 48 0.
4 Common emitter Ta = 25°C 48 IC – VBE Common emitter Collector current IC (mA) 40 0.
3 32 24 16 8 0 0 0 2 4 6 8 10 12 14 16 0.
2 Collector current IC (mA) VCE = 5 V 32 Ta = 100°C 25 −25 IB = 0.
1 mA 16 0 0 0.
4 0.
8 1.
2 1.
6 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 1000 Common emitter 500 1 VCE = 5 V VCE (sat) – IC Common emitter IC/IB = 10 Collector-emitter saturation voltage VCE (...


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