isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC3076
DESCRIPTION ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.
5V (Max.
)@ IC= 1A ·Complementary to 2SA1241 ·100% tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier application ·Power switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
IB
Base Current
PC
Collector Power Dissipation Ta=25℃
PC
Collector Power Dissipation TC=25℃
TJ
Junction Temperature
1
A
1.
0
W
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