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2SC3011

Kexin
Part Number 2SC3011
Manufacturer Kexin
Description Silicon NPN Epitaxial Transistor
Published Oct 29, 2013
Detailed Description SMD Type Silicon NPN Epitaxial 2SC3011 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1...
Datasheet PDF File 2SC3011 PDF File

2SC3011
2SC3011

Overview
SMD Type Silicon NPN Epitaxial 2SC3011 SOT-23 +0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1 Transistors IC Unit: mm Features +0.
1 2.
4-0.
1 1 +0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1 2 High fT : fT=6.
5GHz 0.
55 Low Noise Figure: NF=2.
3dB(Typ.
) f=1GHz +0.
1 1.
3-0.
1 High Gain :|S21e|2=12dB(TYP.
) 0.
4 3 +0.
05 0.
1-0.
01 +0.
1 0.
97-0.
1 1.
Base 2.
Emitter 3.
collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 20 7 3 30 10 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Reverse Transfer Capacitance Input Capacitance Transition Frequency Insertion Gain Noise Figure Symbol ICBO IEBO Testconditons VCB = 10 V, IE = 0 VEB = 1.
0 V, IC = 0 7 30 120 0.
1 0.
87 VCB = 5 V, IE = 0, f = 1 MHz VEB=0,IC=0,f=1MHZ VCE=5V,IC=10mA 2 Min Typ Max 1.
0 1.
0 V(BR)CEO IC = 0.
5 mA, IB = 0 hFE VCE (sat) VBE (sat) Cob Cre Cib fT |S21e| NF VCE = 5 V, IC = 10 mA IC = 10 mA, IB = 1mA +0.
1 0.
38-0.
1 0-0.
1 Unit ìA ìA V V V 0.
9 pF pF pF GHz dB dB 0.
7 0.
5 0.
8 6.
5 12 2.
3 VCE=5V,IC=10mA,f=1GHZ VCE=5V,IC=5mA,f=1GHz Marking Marking MA www.
kexin.
com.
cn 1 Free Datasheet http://www.
datasheet4u.
com/ ...


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