isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Emitter Voltage ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High voltage switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
1
A
PC
Collector Power Dissipation
2.
0
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3632
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isc Silicon
NPN Power T...