DatasheetsPDF.com

2SC3607

Toshiba Semiconductor
Part Number 2SC3607
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3607 2SC3607 VHF~UHF Band Low Noise Amplifier Applications Un...
Datasheet PDF File 2SC3607 PDF File

2SC3607
2SC3607

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3607 2SC3607 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain.
· NF = 1.
1dB, |S21e|2 = 9.
5dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation VCBO VCEO VEBO IB IC PC 20 12 3 40 80 400 800 (Note 1) Junction temperature Storage temperature range Tj 150 Tstg -55~125 Note 1: When mounted ceramic substrate of 250 mm2 ´ 0.
8 t Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-5K1A Weight: 0.
05 g (typ.
) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 1 GHz VCE = 10 V, IC = 40 mA, f = 1 GHz Min Typ.
Max Unit 5 6.
5 ¾ GHz ¾ 15 ¾ dB 6 9.
5 ¾ ¾ 1.
1 ¾ dB ¾ 1.
8 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Collector cut-off current Emitter cut-off current DC current gain Collecter output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz (Note 2) ¾ ¾ 30 ¾ ¾ Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Typ.
¾ ¾ ¾ 1.
15 0.
8 Max 1 1 250 ¾ 1.
25 Unit mA mA pF pF 1 2003-03-19 Marking 2SC3607 2 2003-03-19 2SC3607 3 2003-03-19 2SC3607 4 2003-03-19 2SC3607 5 2003-03-19 2SC3607 6 2003-03-19 2SC3607 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)