isc Silicon
PNP Power
Transistor
2SC5411
DESCRIPTION · With TO-3PFa packaging · High collector-base voltage · High power dissipation · Low saturation voltage · Minimum Lot-to-Lot variations for
robust device performance and reliable operation
APPLICATIONS · Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
14
A
ICM
Collector Current-Peak
28
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
7
A
60
W
150
℃
Tstg
Storage Temperature Range
-5...