isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD1619
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 25V (Min) ·Complement to Type 2SB1119 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for LF Amp Electronic Governor applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
25
V
VCEO Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ Tc=25℃
TJ
Junction Temperature
2
A
0.
5
W
150
℃
Tstg
Storage Temperatur...