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2SD1606

Hitachi Semiconductor
Part Number 2SD1606
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collec...
Datasheet PDF File 2SD1606 PDF File

2SD1606
2SD1606

Overview
2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1.
Base 2.
Collector (Flange) 3.
Emitter ID 2.
6 kΩ (Typ) 160 Ω (Typ) 3 1 2 3 2SD1606 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Ratings 120 120 7 6 12 40 150 –55 to +150 6 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 — — 1000 — — — — — — — — Typ — — — — — — — — — — 0.
6 7.
0 2.
0 Max — — 100 10 20000 1.
5 3.
0 2.
0 3.
5 3.
0 — — — V V V V V µs µs µs Unit V V µA µA Test conditions I C = 25 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 3 A*1 I C = 3 A, IB = 6 mA*1 I C = 6 A, IB = 60 mA*1 I C = 3 A, IB = 6 mA*1 I C = 6 A, IB = 60 mA*1 I D = 6 A*1 I C = 3 A, IB1 = –IB2 = 6 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Storage time Fall time Note: 1.
Pulse test.
hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t stg tf 2 2SD1606 Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 10 iC (peak) Collector current IC (A) IC (max) 3 PW Area of Safe Operation 1 µs 0µ 10 s 40 1m s 1.
0 0.
3 0.
1 Ta = 25°C 1 shot pulse 0.
03 DC C s 5° =2 0m TC =1 n( tio era Op 20 ) 0 50 100 Case temperature TC (°C) 150 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristics 10 DC current transfer ratio hFE 2.
5 30,000 DC Current Transfer Ratio vs.
Collector Current Collector current IC (A) 8 3.
0 10,000 3,000 1,000 300 100 30 0...


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