isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD1624
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min) ·Fast switching speed ·100% tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for LF Amp Electronic Governor applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ Tc=25℃
TJ
Junction Temperature
6
A
0.
5
W
150
℃
Tstg
Storage Temperature Range
-55~150...