2SD2137

2SD213 : ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 20 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website.

2SD2130 : 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm · High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A, IB = 10 mA) · Zener diode included between collector and base. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating.

2SD2131 : TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2131 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) • Zener diode included between collector and base. • Unclamped inductive load energy: E = 150 mJ (min) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VC.

2SD2132 : .

2SD2133 : Power Transistors 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver 7.5±0.2 Unit: mm 4.5±0.2 • Low collector-emitter saturation voltage VCE(sat) 10.8±0.2 0.65±0.1 16.0±1.0 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 1 1.5 1.5 150 −55 to +150 Unit V V V A A W °C °C 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ ■ Features 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.5±0.1.

2SD2135 : DiMscaoinntteinnuaendce/PlehattspMe://avwiisnwittwefno.sallenomcweiicn/pDogdlnaiisUs.npccReoaodLnnntapdtamiinslnibasuaouonceinenuoedidtctnde.ilttcnnaimynocatpeua.lnuejsepicndtd/eteeientnstynfy/opafporenemldlcoaewtitioynnpg.efour Product lifecycle stage. DiMscaoinntteinnuaendce/PlehattspMe://avwiisnwittwefno.sallenomcweiicn/pDogdlnaiisUs.npccReoaodLnnntapdtamiinslnibasuaouonceinenuoedidtctnde.ilttcnnaimynocatpeua.lnuejsepicndtd/eteeientnstynfy/opafporenemldlcoaewtitioynnpg.efour Product lifecycle stage. .

2SD2136 : Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 7.5±0.2 Unit: mm 4.5±0.2 16.0±1.0 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ ■ Features 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Stor.

2SD2136 : The UTC 2SD2136 is designed for power application.  FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * Allowing supply with the radial taping.  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - 2SD2136G-x-AA3-R SOT-223 2SD2136L-x-T60-K 2SD2136G-x-T60-K TO-126 2SD2136L-x-T6C-K 2SD2136G-x-T6C-K TO-126C 2SD2136L-x-T6S-K 2SD2136G-x-T6S-K TO-126S Note: Pin assignment: E: Emitter B: Base C: Collector Pin Assignment 123 BCE BCE BCE BCE Packing Tape Reel Bulk Bulk Bulk  MARKING SOT-223 TO-126 / TO-126C / TO-126S www.unisonic.com.tw Copyright © 2014 Unisonic Tech.

2SD2136 : Elektronische Bauelemente 2SD2136 3A , 60V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low frequency power amplifier Low Collector-Emitter Saturation Voltage VCE(sat) High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. TO-126 1Emitter 2Collector 3Base CLASSIFICATION OF hFE (1) Product-Rank 2SD2136-P Range 40~90 2SD2136-Q 70~150 2SD2136-R 120~250 Collector 2 3 Base 1 Emitter A E F N L M K B H J C D G REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2..

2SD2136 : RoHS 2SD2136 2SD2136 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 1.25 W (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 3A OV(BR)CBO: 60 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ TO-126 1. EMITTER 2. COLLECTOR 3. BASE 123 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain ECollector-emitter saturation voltage LBase-emitter voltage ETransition frequency J Turn-on time Switch Time Storage time WE Fall time Symbol V(BR)CBO.

2SD2137 : Power Transistors 2SD2137, 2SD2137A (planed maintMeaniantnecneatnycpee/,Dimsaciontnteinnaunecdeitnyclpue,deplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaendtype)ce Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A 4.2±0.2 10.0±0.2 Unit: mm 5.0±0.1 1.0±0.2 I Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base 2SD2137 voltage 2SD2137A VCBO 60 80 V Collector to emitter vol.

2SD2137A : Power Transistors 2SD2137, 2SD2137A (planed maintMeaniantnecneatnycpee/,Dimsaciontnteinnaunecdeitnyclpue,deplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaendtype)ce Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A 4.2±0.2 10.0±0.2 Unit: mm 5.0±0.1 1.0±0.2 I Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base 2SD2137 voltage 2SD2137A VCBO 60 80 V Collector to emitter vol.

2SD2137A : Production specification Power Transistors 2SD2137A FEATURES  High Forward Current Transfer Ratio hFE Which Has Satisfactory Linearity. Pb Lead-free  Low Collector-emitter Saturation Voltage VCE(sat).  Allowing Supply With The Radial Taping. APPLICATIONS  For Power Amplification.  Complementary to 2SB1417A. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO VEBO IC ICP PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction and Storage Temperature 80 V 6V 3A Ta=25℃ 5A 15 W 2 -55 to +150 ℃ .

2SD2137A : ·Silicon NPN triple diffusion planar type ·Complementary to 2SB1417A ·Low Collector to Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Allowing supply with the radial taping APPLICATIONS ·Designed for power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A Total Power Dissipation @TC=25℃ 15 PT W Total Power Dissipation @Ta=25℃ 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2137A is.

2SD2138 : Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1418 and 2SB1418A 5.0±0.1 Unit: mm 13.0±0.2 4.2±0.2 s Features q q 10.0±0.2 1.0 2.5±0.2 High forward current transfer ratio hFE which has satisfactory linearity Allowing supply with the radial taping 90° 1.2±0.1 18.0±0.5 Solder Dip s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 5 4 2 15 2 150 –55 to +150 Unit V 2SD2138 2SD2138A 2SD2138 C1.0 2.25±0.2 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 Collector to base voltage Collector to 0.55±0.1 C1.0 emitter voltage 2SD2138A Emitter to base voltag.

2SD2138A : Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2138 and 2SD2138A 13.0±0.2 4.2±0.2 Unit: mm 5.0±0.1 10.0±0.2 1.0 s Features q q q High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25˚C) Ratings –60 –80 –60 –80 –5 –4 –2 15 2.0 150 –55 to +150 Unit V 90° 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1418 2SB1418A 2SB1418 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 1 2 3 emitter voltage 2SB1418A Emitter to base volt.