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2SD2133

Panasonic Semiconductor
Part Number 2SD2133
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver 7.5±0.2 Unit:...
Datasheet PDF File 2SD2133 PDF File

2SD2133
2SD2133

Overview
Power Transistors 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver 7.
5±0.
2 Unit: mm 4.
5±0.
2 • Low collector-emitter saturation voltage VCE(sat) 10.
8±0.
2 0.
65±0.
1 16.
0±1.
0 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 1 1.
5 1.
5 150 −55 to +150 Unit V V V A A W °C °C 2.
5±0.
1 0.
85±0.
1 1.
0±0.
1 0.
8 C 90˚ ■ Features 3.
8±0.
2 0.
8 C 0.
7±0.
1 0.
7±0.
1 1.
15±0.
2 1.
15±0.
2 0.
5±0.
1 0.
8 C 1 2 3 2.
05±0.
2 0.
4±0.
1 2.
5±0.
2 2.
5±0.
2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO hFE1 *1, 2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) *1 Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 0.
5 A VCE = 5 V, IC = 1 A VCE = 10 V, IC = 1 mA IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Min 60 50 5 Typ Max Unit V V V µA  0.
1 85 50 35 0.
2 0.
85 200 11 0.
4 1.
20 100 340 hFE3 VCE(sat) VBE(sat) fT Cob V V MHz pF Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 Publication date: May 2003 SJD00244BED 1 2SD2133 PC  Ta 2.
0 Without heat sink IC  VCE 1.
2 Ta=25˚C IB=10mA 9mA 1.
0 8mA 7mA 6mA IC  I B 1.
...


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