isc Silicon
NPN Power
Transistor
DESCRIPTION ·Silicon
NPN triple diffusion planar type ·Complementary to 2SB1417A ·Low Collector to Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Allowing supply with the radial taping
APPLICATIONS ·Designed for power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
5
A
Total Power Dissipation @TC=25℃
15
PT
W
Total Power Dissipation @Ta=25℃
2
TJ
Junction Temperature
150
℃
Tstg...