isc Silicon
PNP Power
Transistors
INCHANGE Semiconductor
3CD9A
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-15
A
PC
Collector Power Dissipation@Tc=75℃
150
W
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL C...