DatasheetsPDF.com

3CD6D

Part Number	3CD6D
Manufacturer	Inchange
Description	PNP Transistor
Published	Feb 17, 2009
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min.) ·DC Current ...
Datasheet	3CD6D PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min.
) ·DC Current Gain- : hFE=10-180@IC= -2.
5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.
5V(Max)@ IC= -2.
5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier ·Low speed switching ·Power regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=75℃ TJ Junction Temperature -5 A 50 W 150 ℃ Tstg Storage Tempe...

Similar Datasheet

3CD1375 SILICON PNP TRANSISTOR - BLUE ROCKET ELECTRONICS
3CD14001 High Voltage Fast Switching PNP Power Transistor - GME
3CD2051 Silicon PNP transistor - BLUE ROCKET ELECTRONICS
3CD3001 TO-251 Plastic Encapsulate Transistors - Jiangsu Changjiang
3CD3C PNP Transistor - INCHANGE
3CD6D PNP Transistor - Inchange
3CD834 PNP Transistor - INCHANGE
3CD834 DIODE - Dayan Technology
3CD910 Silicon PNP transistor - BLUE ROCKET ELECTRONICS
3CD910 SILICON PNP TRANSISTOR - LZG

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)