isc Silicon
NPN Power
Transistor
DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Energy-saving light ·Electronic ballasts ·High frequency switching power supply ·High frequency power transform
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
12
A
PC
Collector Power Dissipation@TC=25℃
120
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
3DD209L
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