isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.
2A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BD239; 60V(Min)- BD239A 80V(Min)- BD239B; 100V(Min)- BD239C
·Complement to Type BD240/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD239
55
BD239A
70
VCER
Collector-Emitter Voltage
V
BD239B
90
BD239C
115
BD239
45
BD239A
60
VCEO
Collector-Emitter Voltage
V
BD239B
80
BD239C
100
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Contin...