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BD232

Part Number	BD232
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon NPN Power Transistor BD232 DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- :...
Datasheet	BD232 PDF File

Overview

isc Silicon NPN Power Transistor BD232 DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power output stages and line driver in TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5.
0 V IC Collector Current-Continuous 0.
5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.
25 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ...

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