isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 70V (Min) ·High Current Capability ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO VEBO
IC
Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature Range
100
V
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