isc Silicon
NPN Darlington Power
Transistor
INCHANGE Semiconductor
BDX87C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min) ·Complement to Type BDX88C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
100
UNIT V
VCEO
VEBO IC ICM IB PC TJ Tstg
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature
Storage T...