INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
BF457/458/459
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO(BR) = 160V(Min)- BF457 250V(Min)- BF458 300V(Min)- BF459
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Intended for video output stages in colour and black And white TV receivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BF457
160
V
VCBO
Collector-Base Voltage BF458
250
BF459
300
BF457
160
V
VCEO
Collector-Emitter Voltage BF458
250
BF459
300
VEBO
Emitter-Base Voltage
5
V
ICM
Collector Current-Peak
300
mA
IBM
Base Current-Peak
PC
Collect...