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BF410A

Part Number	BF410A
Manufacturer	NXP
Description	N-channel silicon field-effect transistors
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product speciﬁcation File un...
Datasheet	BF410A PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product speciﬁcation File under Discrete Semiconductors, SC07 December 1990 Philips Semiconductors Product speciﬁcation N-channel silicon ﬁeld-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range.
These FETs can be supplied in four IDSS groups.
Special features are the low feedback capacitance and the low noise figure.
Thanks to these special features the BF410 is very suitable for applications such as the RF stages in FM portables (type A), car radios (type B) and mains radios (type C) or the mixer stage (type D).
PINNING - TO-92 VARIANT 1 = drain 2 = source 3 = gate BF410A to D handbook, halfpage 2 1 3 g MAM257 d s Fig.
1 Simplified outline and symbol QUICK REFERENCE DATA Drain-source voltage Drain current (DC or average) Total power dissipation up to Tamb = 75 °C Drain current VDS = 10 V; VGS = 0 Transfer admittance VDS = 10 V; VGS = 0; f = 1 kHz Feedback capacitance VDS = 10 V; VGS = 0 VDS = 10 V; ID = 5 mA Noise ﬁgure at optimum source admittance GS = 1 mS; −BS = 3 mS; f = 100 MHz VDS = 10 V; VGS = 0 VDS = 10 V; ID = 5 mA F F typ.
typ.
1.
5 − 1.
5 − − 1.
5 − dB 1.
5 dB Crs Crs typ.
typ.
0.
5 − 0.
5 − − 0.
5 − pF 0.
5 pF  yfs  min.
2.
5 4 6 7 mS IDSS min.
max.
0.
7 3.
0 2.
5 7.
0 6 12 10 mA 18 mA Ptot max.
BF410A B 300 C D mW VDS ID max.
max.
20 30 V mA December 1990 2 Philips Semiconductors Product speciﬁcation N-channel silicon ﬁeld-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage (open source) Drain current (DC or average) Gate current Total power dissipation up to Tamb = 75 °C Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS Tamb = 25 °C Gate cut-off current −VGS = 0.
2 V; VDS ...

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