isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Voltage ·DARLINGTON ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
15
A
ICM
Collector Current-peak
30
A
IB
Base Current
1
A
IBM
Base Current-peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
5
A
135
W
175
℃
Tstg
Storage Temperature Range
-65~175 ℃
THERMAL CHARACTERISTICS
SYMB...