isc Silicon
NPN Power
Transistor
BUL56B
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 100V(Min.
) ·Collector Saturation Voltage
: VCE(sat) = 0.
2V(Max) @ IC= 1A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in electronic ballast applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
18
A
ICM
Collector Current-peak
25
A
IB
Base Current-Continuous
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperat...