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BUL52A

INCHANGE
Part Number BUL52A
Manufacturer INCHANGE
Description NPN Transistor
Published Oct 22, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) ·Collector ...
Datasheet PDF File BUL52A PDF File

BUL52A
BUL52A

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.
) ·Collector Saturation Voltage : VCE(sat) = 0.
1V(Max) @ IC= 0.
1A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A ICM Collector Current-peak 10 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 2.
5 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ BUL52A isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIO...


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