isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.
) ·Low Collector Saturation Voltage
: VCE(sat) = 0.
5V(Max) @ IC= 1A ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in lighting applications and low cost
switch-mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
800
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-peak tp5ms
8
A
IB
Base Current-Continuous
2
A
...